Description
MOS-TECH Semiconductor Co.,LTD MT3116 N-Channel Power MOSFET 100V, 176A, 3.5mΩ .
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-sta.
Features
* Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extr emely Low
RDS(on)
* High Power and Current Handling Capability
Applications
* DC-DC primary bridge
* DC-DC Synchronous rectification
* Hot swap
D
G DS
TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Curren
- Continuous (Silicon Limited)
- C