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MT3116, MT3116-MOS N-Channel Powe MOSFET

MT3116 Description

MOS-TECH Semiconductor Co.,LTD MT3116 N-Channel Power MOSFET 100V, 176A, 3.5mΩ .
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-sta.

MT3116 Features

* Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extr emely Low RDS(on)
* High Power and Current Handling Capability

MT3116 Applications

* DC-DC primary bridge
* DC-DC Synchronous rectification
* Hot swap D G DS TO-220 G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren - Continuous (Silicon Limited) - C

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MT3116, MT3116-MOS. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MT3116, MT3116-MOS
Manufacturer
MOS-TECH
File Size
533.05 KB
Datasheet
MT3116-MOS-TECH.pdf
Description
N-Channel Powe MOSFET
Note
This datasheet PDF includes multiple part numbers: MT3116, MT3116-MOS.
Please refer to the document for exact specifications by model.

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N-Channel Powe MOSFET MOS-TECH
MOS-TECH MT3116-like datasheet