MT4407 Datasheet - MOS-TECH

MT4407 P-Channel MOSFET

This P-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pack.

MT4407 Features

* Max rDS(on) = 13m:VGS = -10V, ID = -12A

* Max rDS(on) = 20m:VGS = -4.5V, ID = -12A

* Extended VGS range (-25V) for battery applications

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability

MT4407 Datasheet (966.48 KB)