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MT4435L2, MT4435L2_Mos - P-Channel Enhancement Mode Field Effect Transistor

MT4435L2 Description

Mos-Tech Semiconductor Co.,LTD.MT4435L2 P-Channel Enhancement Mode Field Effect Transistor .

MT4435L2 Features

* Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252 package PRODUCT SUMMARY VDSS -30V ID -7A RDS(ON) (mΩ) Typ 98@ VGS=-10V 130 @ VGS=-4.5V D S NOTE:The MT4435L2 is available in a lead-free package G G S D ABSOLUTE MAXIM

MT4435L2 Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MT4435L2, MT4435L2_Mos. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MT4435L2, MT4435L2_Mos
Manufacturer
Mos-Tech
File Size
279.26 KB
Datasheet
MT4435L2_Mos-Tech.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: MT4435L2, MT4435L2_Mos.
Please refer to the document for exact specifications by model.

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