Description
MT4435 September 2008 MT4435 30V P-Channel PowerTrench® MOSFET General .
This P -Channel MOSFET is a rugged gate version of MOS-TECH Semiconductor’s advanced PowerTrench process.
Features
* 8.8 A,
* 30 V RDS(ON) = 20 mΩ @ V GS =
* 10 V RDS(ON) = 35 mΩ @ V GS =
* 4.5 V
M O S - T E C S HE M I C O N D U C T O R
* Low gate charge (17nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS
Applications
* requiring a wide range of gave drive voltage ratings (4.5V