Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
DC/DC converters
RoHS Compliant
Branding Dash
1 2 3 4
SO-8
5
54 63 72 81
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS
ID
Parameter Drain to Source Voltage
Gate to Source Voltage
Features
- rDS(on) = 4.5mΩ, VGS = 10V, ID = 18A.
- rDS(on) = 6.5mΩ, VGS = 4.5V, ID = 17A.
- High performance trench technology for extremely low
rDS(on).
- Low gate charge.
- High power and current handling capability
General.