MPQ1918GQE-AEC1 Features
* independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs. It also provides a bootstrap technique for the HS driver voltage, and can operate up to 100V. The new charging technology prevents the HS driver voltage from exceeding the VCC voltage (VCC), which prevents the gate vol
Datasheet Details
MPQ1918GQE-AEC1, MPQ1918
MPS
630.07 KB
Half-bridge gan/mosfet driver.
This datasheet PDF includes multiple part numbers: MPQ1918GQE-AEC1, MPQ1918.
Please refer to the document for exact specifications by model.
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MPQ1918GQE-AEC1 Distributor
