MBQ40T120QESTH - IGBT

MagnaChip

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Datasheet Details

Part number: MBQ40T120QESTH
Manufacturer: MagnaChip
File Size: 834.50 KB
Datasheet: MBQ40T120QESTH-MagnaChip.pdf
Description: IGBT

MBQ40T120QESTH Product details

Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. Welder

Features

High Speed Switching & Low Power Loss.
VCE(sat) = 2.1V @ IC = 40A.
High Input Impedance.
trr = 285ns (typ. ).
Ultra-Soft, fast recovery anti-parallel diode.
Ultra-narrowed VF distribution control.
Positive Temperature coefficient for easy paralleling TO-247.
G : Gate.
C : Collector.
E : Emitter GC E Absolute Maximum Ratings Package outline and symbol Characteristics Collector-emitter voltage Gate-emitter voltage DC collector current, limited.

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Published: Jan 11, 2022 |