MDIS1903 - Single N-channel Trench MOSFET

MagnaChip

MDIS1903 Datasheet Preview — Preview of MDIS1903 PDF

Datasheet Details

Part number	MDIS1903
Manufacturer	MagnaChip
File Size	796.19 KB
Description	Single N-channel Trench MOSFET
Datasheet	MDIS1903-MagnaChip.pdf

MDIS1903 Product details

Description

The MDIS1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

Features

 VDS = 100V  ID = 12.8A @VGS = 10V  RDS(ON) (MAX) < 105mΩ @VGS = 10V < 110mΩ @VGS = 6.0V D GDS G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case.

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Published: Apr 10, 2017 |