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MDIS1903 Single N-channel Trench MOSFET

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Description

MDIS1903 * Single N-Channel Trench MOSFET 100V MDIS1903 Single N-channel Trench MOSFET 100V, 12.8A, 105mΩ ㄹ General .
The MDIS1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excel.

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Datasheet Specifications

Part number
MDIS1903
Manufacturer
MagnaChip
File Size
796.19 KB
Datasheet
MDIS1903-MagnaChip.pdf
Description
Single N-channel Trench MOSFET

Features

*  VDS = 100V  ID = 12.8A @VGS = 10V  RDS(ON) (MAX) < 105mΩ @VGS = 10V < 110mΩ @VGS = 6.0V D GDS G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Ener

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