MDI150-12A4 - IGBT

IXYS Corporation

Datasheet Details

NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W q °C °C V~ V~ Nm lb. in. Nm lb. in. mm mm m/s2 g oz. q space and weight savings reduced protection circuits.

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Published: Aug 14, 2007 |