MDI150-12A4 Datasheet - IXYS Corporation

MDI150-12A4 IGBT

www.DataSheet4U.com MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA MII 3 IC25 = 180 A VCES = 1200 V VCE(sat) typ. = 2.2 V MID 3 MDI 3 1 2 3 11 10 9 8 8 9 1 1 8 9 1 11 10 2 11 10 2 2 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 10 W.

MDI150-12A4 Features

* NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base

MDI150-12A4_IXYSCorporation.pdf