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MDI150-12A4 - IGBT

Features

  • NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W q °C °C V~ V~ Nm lb. in. Nm lb. in. mm mm m/s2 g oz. q space and weight savings reduced protection circuits.

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www.DataSheet4U.com MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA MII 3 IC25 = 180 A VCES = 1200 V VCE(sat) typ. = 2.2 V MID 3 MDI 3 1 2 3 11 10 9 8 8 9 1 1 8 9 1 11 10 2 11 10 2 2 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 10 W, non repetitive VGE = ±15 V, TJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 180 120 240 10 ICM = 200 VCEK < VCES 760 150 -40 ...
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