* NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base
MDI145-12A3 Datasheet (136.27 KB)
MDI145-12A3
IXYS Corporation
136.27 KB
Igbt.
www.DataSheet4U.com
MII 145-12 A3
MID 145-12 A3 MDI 145-12 A3
IGBT Modules
Short Circuit SOA Capability Square RBSOA
IC25 = 160 A = 1200 V VCES VC.
📁 Related Datasheet
MDI100-12A3 - IGBT Modules
(ETC)
MII 100-12 A3
MID 100-12 A3 MDI 100-12 A3
IGBT Modules
Short Circuit SOA Capability Square RBSOA
IC25 = 135 A VCES = 1200 V VCE(sat) typ. = 2.2 V
.
MDI100-12A3 - IGBT Module
(IXYS)
IGBT (NPT) Module
Buck Chopper + free wheeling Diode
Part number
MDI100-12A3
MDI100-12A3
VCES I C25 VCE(sat)
= = =
1200 V 135 A 2.2 V
7 6
Feature.
MDI150-12A4 - IGBT
(IXYS Corporation)
..
MII 150-12 A4
MID 150-12 A4 MDI 150-12 A4
IGBT Modules
Short Circuit SOA Capability Square RBSOA
MII
3
IC25 = 180 A VCES = 120.
MDI1752 - N-Channel Trench MOSFET
(MagnaChip)
MDI1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
MDI1752
N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
General Description
The MDI1752 uses advanced Magna.
MDI1N60S - N-Channel Trench MOSFET
(MagnaChip)
MDI1N60S N-channel MOSFET 600V
MDI1N60S
N-Channel MOSFET 600V, 1.0A, 8.5Ω
General Description
The MDI1N60S uses advanced MagnaChip’s MOSFET technolo.
MDI200-12A4 - IGBT Module
(IXYS)
IGBT Modules
Short Circuit SOA Capability Square RBSOA
MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4
IC25 = 270 A
VCES
= 1200 V
V = 2.2 V CE(sat) typ.
MDI2N60 - N-Channel Trench MOSFET
(MagnaChip)
MDD2N60/MDI2N60 N-channel MOSFET 600V
MDD2N60/MDI2N60
N-Channel MOSFET 600V, 1.9A, 4.5Ω
General Description
These N-channel MOSFET are produced usin.
MDI300-12A4 - IGBT Modules
(IXYS)
MII 300-12 A4
MID 300-12 A4 MDI 300-12 A4
IGBT Modules
Short Circuit SOA Capability Square RBSOA
MII
3
IC25 = 330 A VCES = 1200 V VCE(sat) typ. = 2.
