MDI1N60S - N-Channel Trench MOSFET
MDI1N60S Features
* VDS = 600V ID = 1.0A RDS(ON) ≤ 8.5Ω @VGS = 10V @VGS = 10V Applications Power supply Battery charger Ballast IPAK (Short lead) G D S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Pe
