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MDI6N60B

N-Channel Trench MOSFET

MDI6N60B Features

* VDS = 600V ID = 4.5A RDS(ON) ≤ 1.45Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak D

MDI6N60B Datasheet (788.32 KB)

Preview of MDI6N60B PDF

Datasheet Details

Part number:

MDI6N60B

Manufacturer:

MagnaChip

File Size:

788.32 KB

Description:

N-channel trench mosfet.

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MDI6N60B N-Channel Trench MOSFET MagnaChip

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