* NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base
MDI75-12A3 Datasheet (141.60 KB)
MDI75-12A3
IXYS Corporation
141.60 KB
Igbt.
MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 90 A VCES = 1200 V VCE(sat) typ. = 2.2 V MII .
📁 Related Datasheet
MDI75-12A3 IGBT (IXYS)
MDI100-12A3 IGBT Modules (ETC)
MDI100-12A3 IGBT Module (IXYS)
MDI145-12A3 IGBT (IXYS Corporation)
MDI150-12A4 IGBT (IXYS Corporation)
MDI1752 N-Channel Trench MOSFET (MagnaChip)
MDI1N60S N-Channel Trench MOSFET (MagnaChip)
MDI200-12A4 IGBT Module (IXYS)
MDI2N60 N-Channel Trench MOSFET (MagnaChip)
MDI300-12A4 IGBT Modules (IXYS)
