SLD80R850SJ

N-Channel MOSFET

Maple Semiconductor

SLD80R850SJ Features

* -7A, 800V, RDS(on) typ.= 0.8Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 25nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless other

SLD80R850SJ General Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh

*nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching perfo.

SLD80R850SJ Datasheet (618.57 KB)

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SLD80R850SJ

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Maple Semiconductor

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618.57 KB

Description:

N-channel mosfet.

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SLD80R850SJ N-Channel MOSFET Maple Semiconductor

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SLD80R850SJ Features

SLD80R850SJ General Description

Datasheet Details

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Description:

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