SLD830S

N-Channel MOSFET

Maple Semiconductor

SLD830S Features

* - 5.0A, 500V, RDS(on)Typ= 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted Symbol Parameter SLU830S SLD830S VDSS

SLD830S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD830S Datasheet (646.27 KB)

SLD830S Datasheet Preview — Preview of SLD830S PDF

Datasheet Details

Part number:

SLD830S

Manufacturer:

Maple Semiconductor

File Size:

646.27 KB

Description:

N-channel mosfet.

📁 Related Datasheet

SLD830C N-Channel MOSFET (Maple Semiconductor)

SLD830UZ N-Channel MOSFET (Maple Semiconductor)

SLD80N03T 30V N-Channel MOSFET (Msemitek)

SLD80N04T 40V N-Channel MOSFET (Msemitek)

SLD80N06T 60V N-Channel MOSFET (Msemitek)

SLD80R380SJ N-Channel MOSFET (Maple Semiconductor)

SLD80R500SJ N-Channel MOSFET (Maple Semiconductor)

SLD80R600SJ N-Channel MOSFET (Maple Semiconductor)

SLD80R850SJ N-Channel MOSFET (Maple Semiconductor)

SLD840F 500V N-Channel MOSFET (Maple Semiconductor)

TAGS

SLD830S N-Channel MOSFET Maple Semiconductor

Image Gallery

SLD830S Features

SLD830S General Description

Datasheet Details

File Size:

Description:

SLD830S Distributor