SLD830S - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLD830S
Manufacturer	Maple Semiconductor
File Size	646.27 KB
Description	N-Channel MOSFET
Datasheet	SLD830S-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 5.0A, 500V, RDS(on)Typ= 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted Symbol Parameter SLU830S SLD830S VDSS ID IDM VGSS EAS Drain-Source Voltage Drain Current - Continuous (TC = 25℃) Drain Current - Continuous (TC = 100℃) - Pulsed Gate-Source Voltage Single Pulsed Avalanche.

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Published: Dec 28, 2018 |