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SLD830C

N-Channel MOSFET

SLD830C Features

* - 4.0A, 500V, RDS(on) = 1.5Ω@VGS = 10 V - Low gate charge ( typical 20nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,

SLD830C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD830C Datasheet (306.07 KB)

Preview of SLD830C PDF

Datasheet Details

Part number:

SLD830C

Manufacturer:

Maple Semiconductor

File Size:

306.07 KB

Description:

N-channel mosfet.

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TAGS

SLD830C N-Channel MOSFET Maple Semiconductor

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