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SLD830C N-Channel MOSFET

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Description

SLD830C / SLU830C SLD830C/SLU830C 500V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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Datasheet Specifications

Part number
SLD830C
Manufacturer
Maple Semiconductor
File Size
306.07 KB
Datasheet
SLD830C-MapleSemiconductor.pdf
Description
N-Channel MOSFET

Features

* - 4.0A, 500V, RDS(on) = 1.5Ω@VGS = 10 V - Low gate charge ( typical 20nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,

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