Datasheet Details
Part number:
SLD830UZ
Manufacturer:
Maple Semiconductor
File Size:
301.13 KB
Description:
N-channel mosfet.
SLD830UZ-MapleSemiconductor.pdf
Datasheet Details
Part number:
SLD830UZ
Manufacturer:
Maple Semiconductor
File Size:
301.13 KB
Description:
N-channel mosfet.
SLD830UZ, N-Channel MOSFET
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices
SLD830UZ Features
* - 4.5A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ
📁 Related Datasheet
📌 All Tags