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SLD830UZ N-Channel MOSFET

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Description

SLD830UZ / SLU830UZ SLD830UZ / SLU830UZ 550V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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Datasheet Specifications

Part number
SLD830UZ
Manufacturer
Maple Semiconductor
File Size
301.13 KB
Datasheet
SLD830UZ-MapleSemiconductor.pdf
Description
N-Channel MOSFET

Features

* - 4.5A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ

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