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SLD830UZ

N-Channel MOSFET

SLD830UZ Features

* - 4.5A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ

SLD830UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD830UZ Datasheet (301.13 KB)

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Datasheet Details

Part number:

SLD830UZ

Manufacturer:

Maple Semiconductor

File Size:

301.13 KB

Description:

N-channel mosfet.

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SLD830UZ N-Channel MOSFET Maple Semiconductor

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