SLD840F - 500V N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLD840F
Manufacturer	Maple Semiconductor
File Size	363.20 KB
Description	500V N-Channel MOSFET
Datasheet	SLD840F-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 8A, 500V, RDS(on) typ. = 0.7Ω@VGS = 10V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pu.

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Published: Dec 27, 2018 |