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SLD840F

500V N-Channel MOSFET

SLD840F Features

* - 8A, 500V, RDS(on) typ. = 0.7Ω@VGS = 10V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS EA

SLD840F General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD840F Datasheet (363.20 KB)

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Datasheet Details

Part number:

SLD840F

Manufacturer:

Maple Semiconductor

File Size:

363.20 KB

Description:

500v n-channel mosfet.

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TAGS

SLD840F 500V N-Channel MOSFET Maple Semiconductor

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