SLD840UZ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLD840UZ
Manufacturer	Maple Semiconductor
File Size	0.96 MB
Description	N-Channel MOSFET
Datasheet	SLD840UZ-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 6.5A, 500V, RDS(on) typ. = 0.8Ω@VGS = 10V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD840UZ / SLU840UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1.

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Published: Apr 11, 2017 |