SLD8N60U

N-Channel MOSFET

Maple Semiconductor

SLD8N60U Features

* - 7.5A, 600V, RDS(on) = 1.3Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T

SLD8N60U General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD8N60U Datasheet (325.26 KB)

SLD8N60U Datasheet Preview — Preview of SLD8N60U PDF

Datasheet Details

Part number:

SLD8N60U

Manufacturer:

Maple Semiconductor

File Size:

325.26 KB

Description:

N-channel mosfet.

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SLD8N60U N-Channel MOSFET Maple Semiconductor

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SLD8N60U Features

SLD8N60U General Description

Datasheet Details

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Description:

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