Datasheet Details
Part number:
SLD8N60U
Manufacturer:
Maple Semiconductor
File Size:
325.26 KB
Description:
N-channel mosfet.
SLD8N60U-MapleSemiconductor.pdf
Datasheet Details
Part number:
SLD8N60U
Manufacturer:
Maple Semiconductor
File Size:
325.26 KB
Description:
N-channel mosfet.
SLD8N60U, N-Channel MOSFET
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices
SLD8N60U Features
* - 7.5A, 600V, RDS(on) = 1.3Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T
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