SLD8N60U - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLD8N60U
Manufacturer	Maple Semiconductor
File Size	325.26 KB
Description	N-Channel MOSFET
Datasheet	SLD8N60U-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 7.5A, 600V, RDS(on) = 1.3Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Singl.

📁 SLD8N60U Similar Datasheet

Other Datasheets by Maple Semiconductor

Published: Dec 27, 2018 |