SLD8N65U Datasheet (Maple Semiconductor)

SLD8N65U, N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices

SLD8N65U Features

* - 7.5A, 650V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR