SLD8N65U

N-Channel MOSFET

Maple Semiconductor

SLD8N65U Features

* - 7.5A, 650V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR

SLD8N65U General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD8N65U Datasheet (790.30 KB)

SLD8N65U Datasheet Preview — Preview of SLD8N65U PDF

Datasheet Details

Part number:

SLD8N65U

Manufacturer:

Maple Semiconductor

File Size:

790.30 KB

Description:

N-channel mosfet.

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SLD8N65U N-Channel MOSFET Maple Semiconductor

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SLD8N65U Features

SLD8N65U General Description

Datasheet Details

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Description:

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