SLF60R080SS

600V N-Channel MOSFET

Maple Semiconductor

SLF60R080SS Features

* - 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Con

SLF60R080SS General Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. This advanced technology has

*b7L.oe6wAe,gn5a0tee0Vsch,paRerDgcSe(oi(na)ttylylppy.i=cat0al.5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, an.

SLF60R080SS Datasheet (515.37 KB)

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SLF60R080SS

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Maple Semiconductor

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515.37 KB

Description:

600v n-channel mosfet.

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SLF60R080SS 600V N-Channel MOSFET Maple Semiconductor

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SLF60R080SS Features

SLF60R080SS General Description

Datasheet Details

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Description:

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