SLF60R190SS Datasheet (Maple Semiconductor)

SLF60R190SS, N-Channel MOSFET

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology.

This advanced technology has *bL7o.e6wAe,gn5a0tee0Vsch,paRerDgSce(oi(na)ttylylppy.i=cat0al.5i2lΩ5on@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching performance, an

SLF60R190SS Features

* - 22A, 600V, RDS(on) typ.= 150mΩ@VGS =10 V - Low gate charge ( typical 42nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Con