SLF60R190SJ

N-Channel MOSFET

Maple Semiconductor

SLF60R190SJ Features

* - 20A, 600V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

SLF60R190SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLF60R190SJ Datasheet (922.35 KB)

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SLF60R190SJ

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Maple Semiconductor

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922.35 KB

Description:

N-channel mosfet.

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SLF60R190SJ N-Channel MOSFET Maple Semiconductor

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SLF60R190SJ Features

SLF60R190SJ General Description

Datasheet Details

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