SLF60R650SJ

N-Channel MOSFET

Maple Semiconductor

SLF60R650SJ Features

* - 7A, 600V, RDS(on) typ. = 0.58Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R650SJ SLF60R650

SLF60R650SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLF60R650SJ Datasheet (766.51 KB)

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SLF60R650SJ

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Maple Semiconductor

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766.51 KB

Description:

N-channel mosfet.

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SLF60R650SJ N-Channel MOSFET Maple Semiconductor

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SLF60R650SJ Features

SLF60R650SJ General Description

Datasheet Details

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