SLF65R380SS Datasheet - Maple Semiconductor

SLF65R380SS N-Channel MOSFET

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. This advanced technology has *bL7o.e6wAe,gn5a0tee0Vsch,paRerDgSce(oi(na)ttylylppy.i=cat0al.5i2lΩ5on@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching performance, an.

SLF65R380SS Features

* - 11A, 650V, RDS(on) typ.= 330mΩ@VGS =10 V - Low gate charge ( typical 17.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - C

SLF65R380SS-MapleSemiconductor.pdf