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SLF65R190SJ - N-Channel MOSFET

SLF65R190SJ Description

SLP65R190SJ / SLF65R190SJ SLP65R190SJ / SLF65R190SJ 650V N-Channel MOSFET CB-FET General .
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

SLF65R190SJ Features

* - 20A, 650V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

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