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SLF65R420SJ

N-Channel MOSFET

SLF65R420SJ Features

* - 11A, 650V, RDS(on) typ. = 0.38Ω@VGS = 10 V - Low gate charge ( typical 33nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

SLF65R420SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLF65R420SJ Datasheet (586.63 KB)

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Datasheet Details

Part number:

SLF65R420SJ

Manufacturer:

Maple Semiconductor

File Size:

586.63 KB

Description:

N-channel mosfet.

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SLF65R420SJ N-Channel MOSFET Maple Semiconductor

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