SLF65R700SJ

N-Channel MOSFET

Maple Semiconductor

SLF65R700SJ Features

* - 7A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP65R700SJ SLF65R700SJ VD

SLF65R700SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLF65R700SJ Datasheet (766.73 KB)

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SLF65R700SJ

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Maple Semiconductor

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766.73 KB

Description:

N-channel mosfet.

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SLF65R700SJ N-Channel MOSFET Maple Semiconductor

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SLF65R700SJ Features

SLF65R700SJ General Description

Datasheet Details

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