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SLF6N70U

N-Channel MOSFET

SLF6N70U Features

* - 6.0A, 700V, RDS(on) typ = 1.8Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

SLF6N70U General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF6N70U Datasheet (321.18 KB)

Preview of SLF6N70U PDF

Datasheet Details

Part number:

SLF6N70U

Manufacturer:

Maple Semiconductor

File Size:

321.18 KB

Description:

N-channel mosfet.

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SLF6N70U N-Channel MOSFET Maple Semiconductor

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