SLP7N65S

N-Channel MOSFET

Maple Semiconductor

SLP7N65S Features

* - 7.5A, 650V, RDS(on) = 1.4Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 TO-220F G GDS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR E

SLP7N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP7N65S Datasheet (495.53 KB)

SLP7N65S Datasheet Preview — Preview of SLP7N65S PDF

Datasheet Details

Part number:

SLP7N65S

Manufacturer:

Maple Semiconductor

File Size:

495.53 KB

Description:

N-channel mosfet.

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SLP7N65S N-Channel MOSFET Maple Semiconductor

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SLP7N65S Features

SLP7N65S General Description

Datasheet Details

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Description:

SLP7N65S Distributor