SLP7N80C

N-Channel MOSFET

Maple Semiconductor

SLP7N80C Features

* - 7A, 800V, RDS(on)typ. = 1.35Ω@VGS = 10 V - Low gate charge ( typical 38.4nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP7N80C SLF7N80C V

SLP7N80C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP7N80C Datasheet (1.80 MB)

SLP7N80C Datasheet Preview — Preview of SLP7N80C PDF

Datasheet Details

Part number:

SLP7N80C

Manufacturer:

Maple Semiconductor

File Size:

1.80 MB

Description:

N-channel mosfet.

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SLP7N80C N-Channel MOSFET Maple Semiconductor

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SLP7N80C Features

SLP7N80C General Description

Datasheet Details

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Description:

SLP7N80C Distributor