SLP830S

N-Channel MOSFET

Maple Semiconductor

SLP830S Features

* - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GD S TO-220F GDS TO-220 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt P

SLP830S General Description

This Power MOSFET is produced using Maple semi ‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device.

SLP830S Datasheet (741.05 KB)

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Datasheet Details

Part number:

SLP830S

Manufacturer:

Maple Semiconductor

File Size:

741.05 KB

Description:

N-channel mosfet.

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SLP830S N-Channel MOSFET Maple Semiconductor

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SLP830S Features

SLP830S General Description

Datasheet Details

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