SLP830S Datasheet (Maple Semiconductor)

SLP830S, N-Channel MOSFET

This Power MOSFET is produced using Maple semi ‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These device

SLP830S Features

* - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GD S TO-220F GDS TO-220 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt P