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SLP830S - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi ‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GD S TO-220F GDS TO-220 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (T C = 25℃) - Continuous (T C = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Sin.

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Datasheet Details

Part number SLP830S
Manufacturer Maple Semiconductor
File Size 741.05 KB
Description N-Channel MOSFET
Datasheet download datasheet SLP830S Datasheet
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Full PDF Text Transcription

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SLP830S / SLF830S SLP830S / SLF830S 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi ‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 5.0A, 500V, RDS(on) = 1.
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