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SLP80P06T - -60V P-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - P-Channel: -60V - 80A RDS(on)Typ= 17.5mΩ@VGS = -10 V RDS(on))Typ= 19mΩ@VGS = -4.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220C SLP80P06T D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single P.

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Datasheet Details

Part number SLP80P06T
Manufacturer Msemitek
File Size 1.06 MB
Description -60V P-Channel MOSFET
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SLP80P06T SLP80P06T -60V P -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application PWM Application Load Switch Power Management Features - P-Channel: -60V - 80A RDS(on)Typ= 17.5mΩ@VGS = -10 V RDS(on))Typ= 19mΩ@VGS = -4.
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