SLP80R600SJ

N-Channel MOSFET

Maple Semiconductor

SLP80R600SJ Features

* -10A, 800V, RDS(on) typ.= 0.55Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 35nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless oth

SLP80R600SJ General Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh

*nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching perfor.

SLP80R600SJ Datasheet (577.12 KB)

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SLP80R600SJ

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Maple Semiconductor

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577.12 KB

Description:

N-channel mosfet.

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SLP80R600SJ N-Channel MOSFET Maple Semiconductor

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SLP80R600SJ Features

SLP80R600SJ General Description

Datasheet Details

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