SLP830UZ Datasheet - Maple Semiconductor

SLP830UZ N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP830UZ Features

* - 5.0A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T

SLP830UZ Datasheet (322.16 KB)