SLP830UZ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLP830UZ
Manufacturer	Maple Semiconductor
File Size	322.16 KB
Description	N-Channel MOSFET
Datasheet	SLP830UZ-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 5.0A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Singl.

📁 SLP830UZ Similar Datasheet

SLP80P06T - -60V P-Channel MOSFET (Msemitek)
SLP8R-2 - (SLPxxR/S-2) Flex Printed Circuit (Framatome Connectors International)
SLP8S-2 - (SLPxxR/S-2) Flex Printed Circuit (Framatome Connectors International)
SLP-100 - Low Pass Filter (Mini-Circuits)
SLP-100+ - Low Pass Filter (Mini-Circuits)
SLP-1xxx-51 - LED lamp (Sanyo)
SLP-2xxx-51 - LED lamp (Sanyo)
SLP-3117E-51 - 3.1mm yellow-green contact type LED lamp (U-cut version) (Sanyo Semicon Device)

Other Datasheets by Maple Semiconductor

Published: Apr 11, 2017 |