SLP840UZ Datasheet - Maple Semiconductor

SLP840UZ N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP840UZ Features

* - 8,0A, 500V, RDS(on)typ = 0.8Ω@VGS = 10 V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP840UZ SLF840UZ VDSS ID

SLP840UZ Datasheet (1.21 MB)