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SLU6N70U

N-Channel MOSFET

SLU6N70U Features

* - 4.8A, 700V, RDS(on) typ = 1.8Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

SLU6N70U General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLU6N70U Datasheet (293.03 KB)

Preview of SLU6N70U PDF

Datasheet Details

Part number:

SLU6N70U

Manufacturer:

Maple Semiconductor

File Size:

293.03 KB

Description:

N-channel mosfet.

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SLU6N70U N-Channel MOSFET Maple Semiconductor

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