SLU65R2K6SJ

N-Channel MOSFET

Maple Semiconductor

SLU65R2K6SJ Features

* - 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD65R2K6SJ / SLU65R2K6

SLU65R2K6SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLU65R2K6SJ Datasheet (627.85 KB)

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SLU65R2K6SJ

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Maple Semiconductor

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627.85 KB

Description:

N-channel mosfet.

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SLU65R2K6SJ N-Channel MOSFET Maple Semiconductor

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SLU65R2K6SJ Features

SLU65R2K6SJ General Description

Datasheet Details

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