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ME1303AT3 - P-Channel Enhancement Mode Mosfet

Matsuki

The ME1303AT3 by Matsuki is a P-Channel Enhancement Mode Mosfet. Below is the official datasheet preview.

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ME1303AT3 P-Channel Enhancement Mode Mosfet by Matsuki - Datasheet Preview — Official preview page of the ME1303AT3 P-Channel Enhancement Mode Mosfet datasheet (Matsuki).

Datasheet Details

Part number	ME1303AT3
Manufacturer	Matsuki
File Size	965.01 KB
Description	P-Channel Enhancement Mode Mosfet
Datasheet	ME1303AT3-Matsuki.pdf
Additional preview pages of the ME1303AT3 datasheet.

ME1303AT3 Product details

Description

The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

-20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V.
-20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V.
-20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |