ME1303AT3 Datasheet (Matsuki) - P-Channel Enhancement Mode Mosfet

ME1303AT3, P-Channel Enhancement Mode Mosfet

The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME1303AT3 Features

* -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V

* -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V

* -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book