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ME1303AT3 Datasheet - Matsuki

P-Channel Enhancement Mode Mosfet

ME1303AT3 Features

* -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V

* -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V

* -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

ME1303AT3 General Description

The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

ME1303AT3 Datasheet (965.01 KB)

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Datasheet Details

Part number:

ME1303AT3

Manufacturer:

Matsuki

File Size:

965.01 KB

Description:

P-channel enhancement mode mosfet.

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ME1303AT3 P-Channel Enhancement Mode Mosfet Matsuki

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