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ME1303AT3-G, ME1303AT3 P-Channel Enhancement Mode Mosfet

ME1303AT3-G Description

P-Channel Enhancement MOSFET ME1303AT3/ME1303AT3-G GENERAL .
The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME1303AT3-G Features

* -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V
* -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V
* -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)

ME1303AT3-G Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Swi

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME1303AT3-G, ME1303AT3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME1303AT3-G, ME1303AT3
Manufacturer
Matsuki
File Size
965.01 KB
Datasheet
ME1303AT3-Matsuki.pdf
Description
P-Channel Enhancement Mode Mosfet
Note
This datasheet PDF includes multiple part numbers: ME1303AT3-G, ME1303AT3.
Please refer to the document for exact specifications by model.

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P-Channel Enhancement Mode Mosfet Matsuki
Matsuki ME1303AT3-G-like datasheet