Description
P-Channel Enhancement MOSFET ME1303AT3/ME1303AT3-G GENERAL .
The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
Features
* -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V
* -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V
* -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
Applications
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Swi