Datasheet Details
Part number:
ME1303AT3-G, ME1303AT3
Manufacturer:
Matsuki
File Size:
965.01 KB
Description:
P-channel enhancement mode mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME1303AT3-G, ME1303AT3.
Please refer to the document for exact specifications by model.
ME1303AT3-G, ME1303AT3, P-Channel Enhancement Mode Mosfet
The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
ME1303AT3-G Features
* -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V
* -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V
* -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
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