ME1304AT3 Datasheet (Matsuki) - N-Channel 20V (D-S) MOSFET

ME1304AT3, N-Channel 20V (D-S) MOSFET

The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME1304AT3 Features

* RDS(ON) ≦ 65 mΩ @VGS=4.5V

* RDS(ON) ≦ 80 mΩ @VGS=2.5V

* RDS(ON) ≦ 95 mΩ @VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment