Datasheet Details
Part number:
ME1304AT3-G, ME1304AT3
Manufacturer:
Matsuki
File Size:
1.43 MB
Description:
N-channel 20v (d-s) mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME1304AT3-G, ME1304AT3.
Please refer to the document for exact specifications by model.
ME1304AT3-G, ME1304AT3, N-Channel 20V (D-S) MOSFET
The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
ME1304AT3-G Features
* RDS(ON) ≦ 65 mΩ @VGS=4.5V
* RDS(ON) ≦ 80 mΩ @VGS=2.5V
* RDS(ON) ≦ 95 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
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