Description
N-Channel 20-V (D-S) MOSFET ME1304AT3/ME1304AT3-G GENERAL .
The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
Features
* RDS(ON) ≦ 65 mΩ @VGS=4.5V
* RDS(ON) ≦ 80 mΩ @VGS=2.5V
* RDS(ON) ≦ 95 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
Applications
* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC
Ordering Information: ME1304AT3 (Pb-free)
ME1304AT3-G