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ME1304AT3-G, ME1304AT3 N-Channel 20V (D-S) MOSFET

ME1304AT3-G Description

N-Channel 20-V (D-S) MOSFET ME1304AT3/ME1304AT3-G GENERAL .
The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME1304AT3-G Features

* RDS(ON) ≦ 65 mΩ @VGS=4.5V
* RDS(ON) ≦ 80 mΩ @VGS=2.5V
* RDS(ON) ≦ 95 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)

ME1304AT3-G Applications

* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC Ordering Information: ME1304AT3 (Pb-free) ME1304AT3-G

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME1304AT3-G, ME1304AT3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME1304AT3-G, ME1304AT3
Manufacturer
Matsuki
File Size
1.43 MB
Datasheet
ME1304AT3-Matsuki.pdf
Description
N-Channel 20V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME1304AT3-G, ME1304AT3.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel 20V D-S MOSFET Matsuki
Matsuki ME1304AT3-G-like datasheet