Datasheet4U Logo Datasheet4U.com

ME2320DS-G Datasheet - Matsuki

N-Channel 20V (D-S) MOSFET

ME2320DS-G Features

* RDS(ON)=21mΩ@VGS=4.5V

* RDS(ON)=25 mΩ@VGS=2.5V

* RDS(ON)=33 mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batte

ME2320DS-G General Description

The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME2320DS-G Datasheet (1.24 MB)

Preview of ME2320DS-G PDF

Datasheet Details

Part number:

ME2320DS-G

Manufacturer:

Matsuki

File Size:

1.24 MB

Description:

N-channel 20v (d-s) mosfet.

📁 Related Datasheet

ME2320DS N-Channel 20V (D-S) MOSFET (Matsuki)

ME2320D N-Channel 20V (D-S) MOSFET (Matsuki)

ME2320D-G N-Channel 20V (D-S) MOSFET (Matsuki)

ME2322 N-Channel 55V (D-S) MOSFET (Matsuki)

ME2322-G N-Channel 55V (D-S) MOSFET (Matsuki)

ME2323D P-Channel 20V (D-S) MOSFET (Matsuki)

ME2323D P-Channel MOSFET (VBsemi)

ME2323D-G P-Channel 20V (D-S) MOSFET (Matsuki)

ME2324D N-Channel MOSFET (VBsemi)

ME2325 P-Channel 30V (D-S) MOSFET (Matsuki)

TAGS

ME2320DS-G N-Channel 20V D-S MOSFET Matsuki

Image Gallery

ME2320DS-G Datasheet Preview Page 2 ME2320DS-G Datasheet Preview Page 3

ME2320DS-G Distributor