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ME2320DS-G, ME2320DS - N-Channel 20V (D-S) MOSFET

ME2320DS-G Description

Preliminary-ME2320DS/ME2320DS-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL .
The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME2320DS-G Features

* RDS(ON)=21mΩ@VGS=4.5V
* RDS(ON)=25 mΩ@VGS=2.5V
* RDS(ON)=33 mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)

ME2320DS-G Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LC

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME2320DS-G, ME2320DS. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME2320DS-G, ME2320DS
Manufacturer
Matsuki
File Size
1.24 MB
Datasheet
ME2320DS-Matsuki.pdf
Description
N-Channel 20V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME2320DS-G, ME2320DS.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel 20V D-S MOSFET Matsuki
Matsuki ME2320DS-G-like datasheet