ME25P03-G, ME25P03 Datasheet - Matsuki

ME25P03-G P-Channel MOSFET

The ME25P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME25P03-G Features

* RDS(ON)≦12mΩ@VGS=-10V

* RDS(ON)≦14.5mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inver

ME25P03-Matsuki.pdf

ME25P03-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME25P03-G, ME25P03. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME25P03-G, ME25P03

Manufacturer:

Matsuki

File Size:

1.07 MB

Description:

P-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME25P03-G, ME25P03.
Please refer to the document for exact specifications by model.

ME25P03-G Distributor

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ME25P03-G ME25P03 P-Channel MOSFET Matsuki