The ME25P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
ME25P03-G Features
* RDS(ON)≦12mΩ@VGS=-10V
* RDS(ON)≦14.5mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inver
Datasheet Details
ME25P03-G, ME25P03
Matsuki
1.07 MB
P-channel mosfet.
This datasheet PDF includes multiple part numbers: ME25P03-G, ME25P03.
Please refer to the document for exact specifications by model.
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