ME2514 Datasheet (Matsuki) - N-Channel MOSFET

ME2514, N-Channel MOSFET

The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME2514 Features

* RDS(ON)≦166mΩ@VGS=10V

* RDS(ON)≦213mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* DC/DC Converter

* Load Switch PIN CONFIGURATION (SOT-89) Top View

* The Ordering Info