Datasheet Details
Part number:
ME25N06-G, ME25N06
Manufacturer:
Matsuki
File Size:
1.30 MB
Description:
N-channel enhancement mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME25N06-G, ME25N06.
Please refer to the document for exact specifications by model.
ME25N06-G, ME25N06, N-Channel Enhancement MOSFET
The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
ME25N06-G Features
* RDS(ON)≦62mΩ@VGS=10V
* RDS(ON)≦86mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
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