ME25N06-G, ME25N06 Datasheet - Matsuki

ME25N06-G N-Channel Enhancement MOSFET

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME25N06-G Features

* RDS(ON)≦62mΩ@VGS=10V

* RDS(ON)≦86mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

ME25N06-Matsuki.pdf

ME25N06-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME25N06-G, ME25N06. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME25N06-G, ME25N06

Manufacturer:

Matsuki

File Size:

1.30 MB

Description:

N-channel enhancement mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME25N06-G, ME25N06.
Please refer to the document for exact specifications by model.

ME25N06-G Distributor

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ME25N06-G ME25N06 N-Channel Enhancement MOSFET Matsuki