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ME25N06-G, ME25N06 N-Channel Enhancement MOSFET

ME25N06-G Description

N-Channel Enhancement MOSFET GENERAL .
The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME25N06-G Features

* RDS(ON)≦62mΩ@VGS=10V
* RDS(ON)≦86mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME25N06-G Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATION (TO-252) Top View e Ordering Information: ME25N06 (Pb-free) ME25N06-G (Green product) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME25N06-G, ME25N06. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME25N06-G, ME25N06
Manufacturer
Matsuki
File Size
1.30 MB
Datasheet
ME25N06-Matsuki.pdf
Description
N-Channel Enhancement MOSFET
Note
This datasheet PDF includes multiple part numbers: ME25N06-G, ME25N06.
Please refer to the document for exact specifications by model.

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N-Channel Enhancement MOSFET Matsuki
Matsuki ME25N06-G-like datasheet