ME25N06 Datasheet (Matsuki) - N-Channel Enhancement MOSFET

ME25N06, N-Channel Enhancement MOSFET

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME25N06 Features

* RDS(ON)≦62mΩ@VGS=10V

* RDS(ON)≦86mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter