ME2514-G, ME2514 Datasheet - Matsuki

ME2514-G N-Channel MOSFET

The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME2514-G Features

* RDS(ON)≦166mΩ@VGS=10V

* RDS(ON)≦213mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* DC/DC Converter

* Load Switch PIN CONFIGURATION (SOT-89) Top View

* The Ordering Info

ME2514-Matsuki.pdf

ME2514-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2514-G, ME2514. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2514-G, ME2514

Manufacturer:

Matsuki

File Size:

947.22 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2514-G, ME2514.
Please refer to the document for exact specifications by model.

ME2514-G Distributor

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ME2514-G ME2514 N-Channel MOSFET Matsuki