ME2N7002DW Datasheet (Matsuki)

ME2N7002DW, N-Channel MOSFET

The ME2N7002DW is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application suc

ME2N7002DW Features

* ESD Rating 2KV HBM

* 3-pin SOT-323 package

* Pb-free plating ; RoHS compliant (green Product) Mechanical data

* High density cell design for low RDS(ON)

* Very low leakage current in off condition

* Advanced trench process technology

* High-speed switching.

* The so